类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/406 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±1% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 2.5 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 4.5 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
BZV55C4V3Roving Networks / Microchip Technology |
DIODE ZENER 4.3V DO213AA |
![]() |
JANTXV1N5540D-1Roving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
![]() |
BZD27C150P-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 150V 800MW DO219AB |
![]() |
DDZ5V6BQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 5.6V 310MW SOD123 |
![]() |
HZS7C3TD-ERochester Electronics |
DIODE ZENER 0.4W |
![]() |
GLL4753-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 1W MELF |
![]() |
1N6030DRoving Networks / Microchip Technology |
DIODE ZENER 180V 500MW DO35 |
![]() |
BZG05C6V2-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 1.25W DO214AC |
![]() |
MMBZ5231B-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 5.1V 350MW SOT23-3 |
![]() |
1N5263C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW DO35 |
![]() |
BZD27C12P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 800MW DO219AB |
![]() |
MMBZ4702-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 350MW SOT23-3 |
![]() |
JAN1N748CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO213AA |