类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
晶体管型: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
电流 - 集电极 (ic) (max): | 100mA |
电压 - 集电极发射极击穿(最大值): | 50V |
电阻器 - 基极 (r1): | 2.2kOhms |
电阻器 - 发射极基极 (r2): | - |
直流电流增益 (hfe) (min) @ ic, vce: | 30 @ 20mA, 5V |
vce 饱和度(最大值)@ ib, ic: | 150mV @ 500µA, 10mA |
电流 - 集电极截止(最大值): | 1µA |
频率转换: | - |
功率 - 最大值: | 300mW |
安装类型: | Surface Mount |
包/箱: | SOT-563, SOT-666 |
供应商设备包: | SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NHUMH1XNexperia |
NHUMH1/SOT363/SC-88 |
|
DMG9640T0RPanasonic |
TRANS PREBIAS NPN/PNP SSMINI6 |
|
IMD16AT108ROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.3W SMT6 |
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PUMH7,115Nexperia |
TRANS 2NPN PREBIAS 0.3W 6TSSOP |
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RN1710JE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
NPN X 2 BRT, Q1BSR=4.7KΩ, Q1BER= |
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RN46A1(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
PNP + NPN BRT, Q1BSR=22KΩ, Q1BER |
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NSBC143EPDP6T5GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN 254MW SOT963 |
|
NSVB143ZPDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN/PNP 50V SOT563 |
|
NHUMH9FNexperia |
NHUMH9/SOT363/SC-88 |
|
RN2502(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS 2PNP PREBIAS 0.3W SMV |
|
ACX114EUQ-13RZetex Semiconductors (Diodes Inc.) |
PREBIAS TRANSISTOR SOT363 T&R 10 |
|
RN2907FE,LF(CTToshiba Electronic Devices and Storage Corporation |
TRANS 2PNP PREBIAS 0.1W ES6 |
|
DEMD48-7Zetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS NPN/PNP SOT563 |