English
简体中文
TRANS NPN/PNP PREBIAS 0.1W ES6
NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE
IC MCU 16BIT 256KB MROM 100LQFP
MEMORY MODULE 8GB 240UDIMM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 晶体管型: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| 电流 - 集电极 (ic) (max): | 100mA |
| 电压 - 集电极发射极击穿（最大值）: | 50V |
| 电阻器 - 基极 (r1): | 4.7kOhms |
| 电阻器 - 发射极基极 (r2): | - |
| 直流电流增益 (hfe) (min) @ ic, vce: | 120 @ 1mA, 5V |
| vce 饱和度（最大值）@ ib, ic: | 300mV @ 250µA, 5mA |
| 电流 - 集电极截止（最大值）: | 100nA (ICBO) |
| 频率转换: | 250MHz, 200MHz |
| 功率 - 最大值: | 200mW |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | US6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RN2971(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS 2PNP PREBIAS 0.2W US6 |
|
RN2910,LF(CTToshiba Electronic Devices and Storage Corporation |
PNPX2 BRT Q1BSR4.7KOHM Q1BERINF. |
|
RN4905,LF(CTToshiba Electronic Devices and Storage Corporation |
TRANS NPN/PNP PREBIAS 0.2W US6 |
|
NSBC114EPDXV6T5GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN/PNP 50V SOT563 |
|
PUMB2FNexperia |
PUMB2/SOT363/SC-88 |
|
NSBA115EDXV6T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SOT563 |
|
RN1902T5LFTToshiba Electronic Devices and Storage Corporation |
TRANS 2NPN PREBIAS 0.2W US6 |
|
IMD2AT108ROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.3W SMT6 |
|
NHUMD10XNexperia |
NHUMD10/SOT363/SC-88 |
|
FMA3AT148ROHM Semiconductor |
TRANS PREBIAS DUAL PNP SMT5 |
|
DMA9610F0RPanasonic |
TRANS PREBIAS DUAL PNP SSMINI5 |
|
DMC562050RPanasonic |
TRANS 2NPN PREBIAS 0.15W SMINI5 |
|
UMD3NTRROHM Semiconductor |
TRANS NPN/PNP PREBIAS 0.15W UMT6 |