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TRANS NPN 140V 12A TO-3P
MOSFET N-CH 600V D2PAK
ONET1101L 11.3-GBPS LASER DIODE
INSULATION DISPLACEMENT TERMINAL
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 晶体管型: | NPN |
| 电流 - 集电极 (ic) (max): | 12 A |
| 电压 - 集电极发射极击穿（最大值）: | 140 V |
| vce 饱和度（最大值）@ ib, ic: | 700mV @ 700mA, 7A |
| 电流 - 集电极截止（最大值）: | 100nA (ICBO) |
| 直流电流增益 (hfe) (min) @ ic, vce: | 60 @ 1A, 5V |
| 功率 - 最大值: | 100 W |
| 频率转换: | 20MHz |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-3P-3, SC-65-3 |
| 供应商设备包: | TO-3P |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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