English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™-T2 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| rds on (max) @ id, vgs: | 7.2mOhm @ 17A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 30µA |
| 栅极电荷 (qg) (max) @ vgs: | 52nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 3990pF @ 20V |
| 功率 - 最大值: | 65W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerVDFN |
| 供应商设备包: | PG-TDSON-8-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7389PBFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMN31D5UDA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V X2-DFN0806 |
|
FDY2001PZRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
NTZD3154NT5GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.54A SOT563 |
|
SQ9945BEY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 5.4A |
|
EL7222CSE9044-T7Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
IPP50R350CPRochester Electronics |
COOLMOS 10A, 500V N-CHANNEL |
|
SI4808DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
CSD85301Q2Texas Instruments |
MOSFET 2N-CH 20V 5A 6WSON |
|
ALD210802SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
CPH5617-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
ZXMC3AM832TAZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP |
|
PHK31NQ03LTRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
