类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 4.9A, 4.1A |
rds on (max) @ id, vgs: | 35mOhm @ 9A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
栅极电荷 (qg) (max) @ vgs: | 17.5nC @ 10V |
输入电容 (ciss) (max) @ vds: | 796pF @ 25V |
功率 - 最大值: | 1.25W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMDXB600UNEZNexperia |
MOSFET 2N-CH 20V 0.6A 6DFN |
|
IPG20N06S415ATMA1Rochester Electronics |
IPG20N06S4-15- 55V-60V N-CHANNEL |
|
TC8020K6-GRoving Networks / Microchip Technology |
MOSFET 6N/6P-CH 200V 56VQFN |
|
FDMS8090Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 10A PWR56 |
|
DMTH6010LPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 60V 13.1A POWERDI |
|
CSD86311W1723Texas Instruments |
MOSFET 2N-CH 25V 4.5A 12DSBGA |
|
EPC2108EPC |
GANFET 3 N-CH 60V/100V 9BGA |
|
FDI9406_F085Rochester Electronics |
110A, 40V, 0.0022OHM, N-CHANNEL |
|
NTE4007NTE Electronics, Inc. |
IC-CMOS DUAL COMPL. PAIR |
|
SCH1406-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
FDMC89521LSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 8.2A 8POWER33 |
|
DMN33D8LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.25A |
|
DMN63D1LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.25A SOT363 |