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MOSFET 7CH 16TSSOP
40V 17 MOHM T8 S08FL DUAL
MOSFET 6N/6P-CH 200V 56VQFN
IC RF AMP LTE 0HZ-1GHZ 32SMT
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 场效应管类型: | 6 N and 6 P-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 200V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 8Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 50pF @ 25V |
| 功率 - 最大值: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-VFQFN Exposed Pad |
| 供应商设备包: | 56-QFN (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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