English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V, 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A |
| rds on (max) @ id, vgs: | 90mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 3.2nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 180pF @ 10V |
| 功率 - 最大值: | 1.25W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SMD, Flat Lead |
| 供应商设备包: | 8-TSST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMS9620SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8MLP PWR56 |
|
AO6808Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 4.6A 6TSOP |
|
EMH2412-TL-HRochester Electronics |
N-CHANNEL MOSFET |
|
NTMFD5C446NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
PMDPB70XPE,115Nexperia |
MOSFET 2P-CH 20V 3A 6HUSON |
|
NVMFD5C470NWFT1GSanyo Semiconductor/ON Semiconductor |
40V 11.7 MOHM T8 S08FL DU |
|
BSC0911NDATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 18A/30A TISON8 |
|
NVMFD5C466NWFT1GSanyo Semiconductor/ON Semiconductor |
40V 8.1 MOHM T8 S08FL DUA |
|
FDMS3606ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/27A POWER56 |
|
QS8M13TCRROHM Semiconductor |
MOSFET N/P-CH 30V 6A/5A TSMT8 |
|
UPA611TA-T1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SH8K5TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 3.5A SOP8 |
|
STL13DP10F6STMicroelectronics |
MOSFET 2P-CH 100V 13A PWRFLAT56 |
