English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | 5.2A (Ta) |
| rds on (max) @ id, vgs: | 48mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.5nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1525pF @ 30V |
| 功率 - 最大值: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N06S415ATMA2IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
MSCSM120TAM31CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
IRF7304TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
|
ALD1107SBLAdvanced Linear Devices, Inc. |
MOSFET 4P-CH 10.6V 14SOIC |
|
SI7232DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 25A PPAK 1212-8 |
|
NVMFD5C674NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 42A S08FL |
|
HUF7554S3SRochester Electronics |
HUF755453S - 75A, 80V, 0.010 OHM |
|
NP80N03MDE-S18-AYRochester Electronics |
80A, 30V, 0.011OHM, N-CHANNEL , |
|
FDS6990ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7.5A 8SOIC |
|
FW344A-TL-2WRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SI9926CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 8A 8-SOIC |
|
AO4630Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 8-SOIC |
|
APTM10HM05FGRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 278A SP6 |
