类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 4.1A, 3.4A |
rds on (max) @ id, vgs: | 50mOhm @ 7.8A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
栅极电荷 (qg) (max) @ vgs: | 12.2nC @ 10V |
输入电容 (ciss) (max) @ vds: | 600pF @ 25V |
功率 - 最大值: | 1.25W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMC2700UDMQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V24V SOT26 T&R 3 |
|
STL8DN6LF6AGSTMicroelectronics |
MOSFET N-CH 60V 32A POWERFLAT |
|
SC8673010LPanasonic |
MOSFET 2N-CH 30V 16A/40A 8-HSO |
|
SI4932DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
SSM6N7002CFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.17A US6 |
|
FF8MR12W2M1B11BOMA1IR (Infineon Technologies) |
MOSFET 2N-CH 1200V AG-EASY2BM-2 |
|
FD6M045N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF7379QTRIR (Infineon Technologies) |
MOSFET N/P-CH 30V 5.8A/4.3A 8SO |
|
MCM3400A-TPMicro Commercial Components (MCC) |
N-CHANNEL,MOSFETS,DFN2020-6L PAC |
|
QS8J12TCRROHM Semiconductor |
MOSFET 2P-CH 12V 4.5A TSMT8 |
|
IRF7103TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 50V 3A 8-SOIC |
|
DMC1016UPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V 24V POWERDI5060-8 |
|
PMDPB80XP,115Rochester Electronics |
NOW NEXPERIA PMDPB80XP - SMALL S |