PFET, 100A I(D), 40V, 0.0035OHM,
DESCRIPTION PLACE HOLDER
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7272DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 25A PPAK SO-8 |
|
FDW2521CRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SI1965DH-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 12V 1.3A SC70-6 |
|
APTM20AM04FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 200V 372A SP6 |
|
FDMS3669SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A POWER56 |
|
SP8M21FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET (CORRESP |
|
FDW2506PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
CSD88537NDTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
|
FDS6898ASanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 9.4A 8SOIC |
|
SI4900DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 5.3A 8-SOIC |
|
DMTH6016LPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
FDMS7620S-F106Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V POWER56 |
|
NTMD4N03R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 4A 8SOIC |