PWR XFMR LAMINATED 1VA TH
MOSFET N/P-CH 20V SOT963
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 450mA, 310mA |
rds on (max) @ id, vgs: | 990mOhm @ 100mA, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.5nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 27.6pF @ 15V |
功率 - 最大值: | 350mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-963 |
供应商设备包: | SOT-963 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZXMHC3A01T8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 30V 2.7A/2A SM8 |
|
APTC60TDUM35PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 72A SP6-P |
|
SI7218DN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 24A 1212-8 |
|
RF1S45N02LRochester Electronics |
45A, 20V, 0.022OHM, N-CHANNEL LO |
|
SI4925BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 5.3A 8-SOIC |
|
MIC4426CMTRRochester Electronics |
DUAL 1.5A-PEAK LOW-SIDE MOSFET D |
|
MCH3307-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
CSD87334Q3DTexas Instruments |
MOSFET 2N-CH 30V 20A 8SON |
|
AON3611Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 5A/6A 8DFN |
|
NTQD6968NR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
EPC2102EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
|
SIRB40DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
FDC8602Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 1.2A 6-SSOT |