English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA |
| rds on (max) @ id, vgs: | 5.5Ohm @ 100mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.15V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 27.44pF @ 15V |
| 功率 - 最大值: | 330mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-963 |
| 供应商设备包: | SOT-963 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ALD110904PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
SI7212DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 4.9A 1212-8 |
|
DMN2010UDZ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 11A U-DFN2535-6 |
|
STS10DN3LH5STMicroelectronics |
MOSFET 2N-CH 30V 10A 8-SOIC |
|
SIZ254DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
|
IRFR9110TFRochester Electronics |
100V P-CHANNEL MOSFET |
|
SI7962DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 40V 7.1A PPAK SO-8 |
|
BSZ0910NDXTMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
DMN2050LFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 3.3A 6UDFN |
|
SSM6L12TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 30V 500MA UF6 |
|
IRF7306TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 30V 3.6A 8-SOIC |
|
BUK7K12-60EXNexperia |
MOSFET 2N-CH 60V 40A LFPAK |
|
ALD212908PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
