类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta), 6A (Ta) |
rds on (max) @ id, vgs: | 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 7.2nC, 10nC @ 10V |
输入电容 (ciss) (max) @ vds: | 300pF, 480pF @ 15V |
功率 - 最大值: | 2W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMC1229UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V U-DFN2020-6 |
|
ECH8667-TL-HXRochester Electronics |
P-CHANNEL MOSFET |
|
IPG20N04S4L11ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 40V 20A 8TDSON |
|
DMN3024LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 6.8A 8SO |
|
FDM2509NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NTJD4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SOT-363 |
|
QS8J5TRROHM Semiconductor |
MOSFET 2P-CH 30V 5A TSMT8 |
|
RJK03P7DPA-00#J5ARochester Electronics |
POWER, N-CHANNEL MOSFET |
|
CSD87353Q5DTexas Instruments |
MOSFET 2N-CH 30V 40A 8LSON |
|
ALD1110ESALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10V 8SOIC |
|
SQ4917EY-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CHANNEL 60V 8A 8SO |
|
FTCO3V455A1Sanyo Semiconductor/ON Semiconductor |
MOSFET 6N-CH 40V 150A MODULE |
|
EM6K1T2RROHM Semiconductor |
MOSFET 2N-CH 30V .1A EMT6 |