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| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Logic Level Gate, 5V Drive |
| 漏源电压 (vdss): | 25V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
| rds on (max) @ id, vgs: | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| vgs(th) (最大值) @ id: | 1.9V @ 250µA, 1.6V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.8nC @ 45V, 7.4nC @ 45V |
| 输入电容 (ciss) (max) @ vds: | 494pF @ 12.5V, 970pF @ 12.5V |
| 功率 - 最大值: | 6W |
| 工作温度: | -55°C ~ 125°C |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerTDFN |
| 供应商设备包: | 8-VSON (3.3x3.3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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