类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 4A, 3A |
rds on (max) @ id, vgs: | 50mOhm @ 2.4A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 25nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 520pF @ 15V |
功率 - 最大值: | 1.4W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI4590DY-T1-GE3Vishay / Siliconix |
MOSFET N/P CHAN 100V SO8 DUAL |
|
DMC4029SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7A/5.1A 8SO |
|
IPG20N06S4L14AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
IPI60R190C6Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SQ4940AEY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 8A 8SOIC |
|
FDJ1028NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLGD3502NT2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
|
TQM110NB04DCR RLGTSC (Taiwan Semiconductor) |
40V, 50A, DUAL N-CHANNEL POWER M |
|
2SK3634-Z-AZRochester Electronics |
6A, 200V, N-CHANNEL MOSFET |
|
NTLLD4901NFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN |
|
DMP32D9UDA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V X2-DFN0806 |
|
CSD75208W1015Texas Instruments |
MOSFET 2P-CH 20V 1.6A 6WLP |
|
FDR8702HRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |