English
简体中文
PWR XFMR LAMINATED 36VA TH
MOSFET 2N-CH 30V 180MA 6TSSOP
IC OPAMP VFB 1 CIRCUIT 8SO
IC CTLR IRDA LSI REMOTE 48VBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 180mA |
| rds on (max) @ id, vgs: | 4.5Ohm @ 100mA, 10V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.44nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 13pF @ 10V |
| 功率 - 最大值: | 375mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | 6-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
6LP04CH-TL-E-SYRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SSM6N24TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CHX2 VDSS3 |
|
SSM6N61NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 4A UDFN |
|
NTZD3152PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 430MA SOT563 |
|
DMT3020LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
SIA923AEDJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6L |
|
TSM680P06DPQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 60V 12A 8PDFN |
|
NDM3000Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
2SJ172-ERochester Electronics |
10A, 60V, P-CHANNEL MOSFET |
|
CSD88599Q5DCTTexas Instruments |
MOSFET 2N-CH 60V 22-VSON-CLIP |
|
STS8C5H30LSTMicroelectronics |
MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
|
ULN2003F12FN-7Zetex Semiconductors (Diodes Inc.) |
IC PWR RELAY N-CHAN U-DFN3030-10 |
|
FDC6302PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 25V 120MA SSOT6 |