English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ALD310704APCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
APTM50AM38FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP4 |
|
BUK9K18-40E,115Nexperia |
MOSFET 2N-CH 40V 30A LFPAK56D |
|
PMV65UNE,215Rochester Electronics |
2.8A, 20V, N CHANNEL MOSFET, TO |
|
ALD310704ASCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
DMG4822SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 10A 8SO |
|
IRFH4253DTRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 25V 64A/145A PQFN |
|
2N7002DWS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V SOT363 |
|
IRF40H233XTMA1IR (Infineon Technologies) |
TRENCH <= 40V |
|
SH8M51GZETBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET. SH8M51 |
|
NVLJD4007NZTBGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 0.245A WDFN6 |
|
IRF7314TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 5.3A 8-SOIC |
|
PMCXB900UELZNexperia |
20 V, COMPLEMENTARY N/P-CHANNEL |
