English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V, 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.5A, 1A |
| rds on (max) @ id, vgs: | 240mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 2.2nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 80pF @ 10V |
| 功率 - 最大值: | 1W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-SMD, Flat Leads |
| 供应商设备包: | TUMT6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDPC8014SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 8PWRCLIP |
|
SIZ250DT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CH 60-V POWERPAIR |
|
SPA15N65C3Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
APTM120H140FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1200V 8A SP1 |
|
IRF3575DTRPBFRochester Electronics |
IRF3575D - 20V-30V N-CHANNEL |
|
BUK9K8R7-40EXNexperia |
MOSFET 2N-CH 40V 30A 56LFPAK |
|
DMP3028LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 6A SO-8 |
|
IRF7379TRPBFRochester Electronics |
IRF7379 - PLANAR <=40V |
|
SSM6N17FU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
X34 SMALL LOW RON DUAL NCH MOSFE |
|
SPD08N50C3Rochester Electronics |
COOLMOS, 7.6A, 500V, 0.6OHM, N-C |
|
NTMD5838NLR2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 7.4A 8SOIC |
|
NVMFD5C466NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 52A S08FL |
|
ALD1116SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
