English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.8A |
| rds on (max) @ id, vgs: | 25mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 37.6nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1790pF @ 20V |
| 功率 - 最大值: | 1.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMCXB1000UEZNexperia |
MOSFET N/P-CH 30V DFN1010B-6 |
|
RF1S23N06LERochester Electronics |
23A, 60V, 0.065OHM, N-CHANNEL, |
|
EFC4627R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IPG20N06S4L11ATMA2IR (Infineon Technologies) |
MOSFET_)40V 60V) |
|
DF23MR12W1M1B11BPSA1IR (Infineon Technologies) |
MOSFET MOD 1200V 25A |
|
FDG6304PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 25V 0.41A SC70-6 |
|
SP8M4FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET (CORRESP |
|
BSL214NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TSM110NB04LDCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 40V, |
|
BSZ215CHXTMA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V 8TSDSON |
|
CSD87503Q3ETTexas Instruments |
30-V DUAL N-CHANNEL MOSFET, COMM |
|
DMC62D0SVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT563 T&R |
|
BSM080D12P2C008ROHM Semiconductor |
SIC POWER MODULE-1200V-80A |
