English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 7A (Ta) |
| rds on (max) @ id, vgs: | 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 15nC @ 5V, 25nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 1190pF @ 10V, 2600pF @ 10V |
| 功率 - 最大值: | 2W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSL214NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TSM110NB04LDCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 40V, |
|
BSZ215CHXTMA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V 8TSDSON |
|
CSD87503Q3ETTexas Instruments |
30-V DUAL N-CHANNEL MOSFET, COMM |
|
DMC62D0SVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V SOT563 T&R |
|
BSM080D12P2C008ROHM Semiconductor |
SIC POWER MODULE-1200V-80A |
|
PMV55ENEA,215Rochester Electronics |
3.1A, 60V, N CHANNEL, SILICON, M |
|
SSM6N15AFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A 2-2J1C |
|
IRF8313PBFRochester Electronics |
HEXFET POWER MOSFET |
|
CSD86356Q5DTexas Instruments |
25V POWERBLOCK N CH MOSFET |
|
AO6602LAlpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 6-TSOP |
|
RF1S15N06Rochester Electronics |
DISCRETE ,LOGIC LEVEL GATE (5V), |
|
NVMFD5C672NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 49A S08FL |
