English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | EPAD®, Zero Threshold™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 P-Channel, Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 8V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 380mV @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C |
| 安装类型: | Through Hole |
| 包/箱: | 16-DIP (0.300", 7.62mm) |
| 供应商设备包: | 16-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK4070-ZK-E2-AYRochester Electronics |
N-CHANNEL MOSFET |
|
NDS8934Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTUD3128NT5GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
ALD110902SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
AO4828Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 60V 4.5A 8-SOIC |
|
NTMFD4902NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 8DFN |
|
DMN1029UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 12V 5.6A 6UDFN |
|
DMN61D8LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.63A TSOT26 |
|
ZXMC6A09DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V 8-SOIC |
|
APTC60AM45B1GRoving Networks / Microchip Technology |
MOSFET 3N-CH 600V 49A SP1 |
|
SSM6N58NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 4A UDFN6 |
|
IRF7324TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 9A 8-SOIC |
|
DMN66D0LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.115A SOT-363 |
