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RES ARRAY 7 RES 220K OHM 8SIP
PM-MOSFET-SIC-SBD~-SP6P
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 6 N-Channel (3-Phase Bridge) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 1200V (1.2kV) |
| 电流 - 连续漏极 (id) @ 25°c: | 251A (Tc) |
| rds on (max) @ id, vgs: | 10.4mOhm @ 120A, 20V |
| vgs(th) (最大值) @ id: | 2.8V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 696nC @ 20V |
| 输入电容 (ciss) (max) @ vds: | 9060pF @ 1000V |
| 功率 - 最大值: | 1.042kW (Tc) |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | Module |
| 供应商设备包: | SP6-P |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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