TVS DIODE 12V 19.9V DO15
MOSFET N/P-CH 20V 0.18A/0.1A US6
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate, 1.2V Drive |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 180mA, 100mA |
rds on (max) @ id, vgs: | 3Ohm @ 50mA, 4V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 9.5pF @ 3V |
功率 - 最大值: | 200mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | US6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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