English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 3 N and 3 P-Channel (3-Phase Bridge) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A |
| rds on (max) @ id, vgs: | 550mOhm @ 2A, 4V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 150pF @ 10V |
| 功率 - 最大值: | 5W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 12-SIP |
| 供应商设备包: | 12-SIP w/fin |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDY2000PZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
APTM50TAM65FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 500V 51A SP6-P |
|
QS8J11TCRROHM Semiconductor |
MOSFET 2P-CH 12V 3.5A TSMT8 |
|
ALD110814SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
SI4946BEY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 60V 6.5A 8-SOIC |
|
NVMFD5C674NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 42A S08FL |
|
NTMFD5C680NLT1GSanyo Semiconductor/ON Semiconductor |
T6 60V LL SO8FL DUAL |
|
AUIRF9952QTRRochester Electronics |
AUIRF9952 HEXFET POWER MOSFET |
|
IRF7319TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 8SOIC |
|
DMC2700UDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT26 |
|
ALD210808SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
FDC6301NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 220MA SSOT6 |
|
DMC4040SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7.5A 8SO |
