English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| rds on (max) @ id, vgs: | 85mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1140pF @ 30V |
| 功率 - 最大值: | 27W (Tc) |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® SO-8 Dual |
| 供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLJD3181PZTBGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
ICL7667MJARochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
MCCD2004-TPMicro Commercial Components (MCC) |
MOSFET 2N-CH 20V 10A |
|
IRF7105TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 25V 8-SOIC |
|
AON6996Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 50A/60A DFN |
|
DMNH4015SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL 11A 8SO |
|
BUK9K12-60EXNexperia |
MOSFET 2N-CH 60V 35A 56LFPAK |
|
CSD87355Q5DTTexas Instruments |
MOSFET 2N-CH 30V 45A 8LSON |
|
NTLJD3115PTAGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
ALD110808PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
IRF7341GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 5.1A |
|
BUK7K45-100EXNexperia |
MOSFET 2N-CH 100V 21.4A LFPAK56D |
|
SH8J66TB1ROHM Semiconductor |
MOSFET 2P-CH 30V 9A SOP8 |
