类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
rds on (max) @ id, vgs: | 15mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1938pF @ 15V |
功率 - 最大值: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9K12-60EXNexperia |
MOSFET 2N-CH 60V 35A 56LFPAK |
|
CSD87355Q5DTTexas Instruments |
MOSFET 2N-CH 30V 45A 8LSON |
|
NTLJD3115PTAGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
ALD110808PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
IRF7341GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 5.1A |
|
BUK7K45-100EXNexperia |
MOSFET 2N-CH 100V 21.4A LFPAK56D |
|
SH8J66TB1ROHM Semiconductor |
MOSFET 2P-CH 30V 9A SOP8 |
|
AO6604Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 20V 6-TSOP |
|
SQ4284EY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 8A 8SOIC |
|
SP8K2TBROHM Semiconductor |
MOSFET 2N-CH 30V 6A 8-SOIC |
|
FDC3601NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 1A SSOT-6 |
|
UT6JA2TCRROHM Semiconductor |
-30V PCH+PCH MIDDLE POWER MOSFET |
|
SH8JB5TB1ROHM Semiconductor |
-40V DUAL PCH+PCH, SOP8, POWER M |