类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N and 2 P-Channel (H-Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 2.9A, 2.3A |
rds on (max) @ id, vgs: | 160mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 9.7nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1167pF @ 25V |
功率 - 最大值: | 2.1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 12-VDFN Exposed Pad |
供应商设备包: | V-DFN5045-12 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP6110SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 60V 3.3A 8SO |
|
NTQD6968NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPIC1533DWRochester Electronics |
1.5A, 20V, N-CHANNEL, MOSFET |
|
SH8K15TB1ROHM Semiconductor |
MOSFET 2N-CH 30V 9A 8SOP |
|
MSCSM120AM50CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
IPG20N10S4L35ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
DMC3071LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
ALD110800SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
2N7002BKV,115Nexperia |
MOSFET 2N-CH 60V 340MA SOT666 |
|
SI4288DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 9.2A 8SO |
|
FDS8984Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7A 8SOIC |
|
PMV20XNEA,215Rochester Electronics |
6.3A, 20V, N CHANNEL, SILICON, M |
|
NTMFD5C466NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |