English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 50V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A |
| rds on (max) @ id, vgs: | 130mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 255pF @ 25V |
| 功率 - 最大值: | 2.4W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM4953DCS RLGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 30V 4.9A 8SOP |
|
DMN2041UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 4.7A 6UDFN |
|
FDS4895CRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTUD3171PZT5GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BSC0993NDATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 17A TISON8 |
|
APTM08TAM04PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 75V 120A SP6-P |
|
FDS9934CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6.5A/5A 8SOIC |
|
NTMFD4C86NT3GRochester Electronics |
NTMFD4C86N - POWERPHASE, DUAL N- |
|
BSZ105N04NSGRochester Electronics |
OPTLMOS POWER-MOSFET |
|
BSO220N03MDGXUMA1IR (Infineon Technologies) |
MOSFET 2N-CH 30V 6A 8DSO |
|
DMC67D8UFDBQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V U-DFN2020- |
|
ALD110804SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
DMN2004DMK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 0.54A SOT-26 |
