类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 14.5A |
rds on (max) @ id, vgs: | 5.4mOhm @ 5.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 42.3nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1418pF @ 10V |
功率 - 最大值: | 1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-UFDFN Exposed Pad |
供应商设备包: | U-DFN2030-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN2053UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
SQJ940EP-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 15A PPAK SO-8 |
|
SI4931DY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 6.7A 8-SOIC |
|
NTUD3127CT5GRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDMD8280Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 80V 11A 12POWER |
|
ALD310702PCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16DIP |
|
IPG20N06S2L35ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
SIL2308-TPMicro Commercial Components (MCC) |
N/P-CHANNEL MOSFETSOT23-6L |
|
DMG4800LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 7.5A 8SO |
|
AON7804Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 9A 8DFN |
|
NTLTD7900ZR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF6MR12KM1PHOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDW9926ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |