English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A |
| rds on (max) @ id, vgs: | 21mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 888pF @ 15V |
| 功率 - 最大值: | 3.1W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerSMD, Flat Leads |
| 供应商设备包: | 8-DFN-EP (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLTD7900ZR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF6MR12KM1PHOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDW9926ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
AO9926CAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 7.6A 8SOIC |
|
TT8J2TRROHM Semiconductor |
MOSFET 2P-CH 30V 2.5A TSST8 |
|
FF6MR12KM1BOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
NTHD5904T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMC2004LPK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V 6-DFN |
|
DMC2025UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
NDS9959Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ2553NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF11MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V DUAL |
|
SI7997DP-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 60A PPAK SO-8 |
