类型 | 描述 |
---|---|
系列: | CoolSiC™ |
包裹: | Tray |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 1200V (1.2kV) |
电流 - 连续漏极 (id) @ 25°c: | 250A (Tc) |
rds on (max) @ id, vgs: | 5.81mOhm @ 250A, 15V |
vgs(th) (最大值) @ id: | 5.15V @ 80mA |
栅极电荷 (qg) (max) @ vgs: | 496nC @ 15V |
输入电容 (ciss) (max) @ vds: | 14700pF @ 800V |
功率 - 最大值: | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | AG-62MM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTHD5904T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMC2004LPK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V 6-DFN |
|
DMC2025UFDB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
NDS9959Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ2553NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF11MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V DUAL |
|
SI7997DP-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 60A PPAK SO-8 |
|
SLA5212Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
|
CAS325M12HM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 444A MODULE |
|
SI4943BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |