English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel Complementary |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Ta), 3.5A (Ta) |
| rds on (max) @ id, vgs: | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA, 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.3nC @ 10V, 15nC @ 8V |
| 输入电容 (ciss) (max) @ vds: | 486pF @ 10V, 642pF @ 10V |
| 功率 - 最大值: | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-UDFN Exposed Pad |
| 供应商设备包: | U-DFN2020-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDS9959Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ2553NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF11MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V DUAL |
|
SI7997DP-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 60A PPAK SO-8 |
|
SLA5212Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
|
CAS325M12HM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 444A MODULE |
|
SI4943BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
