CAP CER 220PF 25V C0G/NP0 1210
CAP CER 680PF 50V C0G 0603
MOSFET 2P-CH 30V 60A PPAK SO-8
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 60A |
rds on (max) @ id, vgs: | 5.5mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 160nC @ 10V |
输入电容 (ciss) (max) @ vds: | 6200pF @ 15V |
功率 - 最大值: | 46W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | PowerPAK® SO-8 Dual |
供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SLA5212Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
|
CAS325M12HM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 444A MODULE |
|
SI4943BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
FDB12N50FTMRochester Electronics |
MOSFET N-CH 500V 11.5A D2PAK |
|
QS6J11TRROHM Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6 |
|
NP32N055HLE-AZRochester Electronics |
32A, 55V, 0.033OHM, N-CHANNEL , |
|
MTMC8E2A0LBFPanasonic |
MOSFET 2N-CH 20V 7A WMINI8 |