







MOSFET 2P-CH 20V 6.3A 8-SOIC
POW SNK SCREW
SENSOR 1000PSI 2MA
IC BUF NON-INVERT 3.6V 20TSSOP
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.3A |
| rds on (max) @ id, vgs: | 19mOhm @ 8.4A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 1.1W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
|
FDB12N50FTMRochester Electronics |
MOSFET N-CH 500V 11.5A D2PAK |
|
|
QS6J11TRROHM Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6 |
|
|
NP32N055HLE-AZRochester Electronics |
32A, 55V, 0.033OHM, N-CHANNEL , |
|
|
MTMC8E2A0LBFPanasonic |
MOSFET 2N-CH 20V 7A WMINI8 |
|
|
VT6J1T2CRROHM Semiconductor |
MOSFET 2P-CH 20V 0.1A VMT6 |
|
|
SLA5086Sanken Electric Co., Ltd. |
MOSFET 5P-CH 60V 5A 12-SIP |
|
|
QH8JB5TCRROHM Semiconductor |
-40V DUAL PCH+PCH SMALL SIGNAL M |