English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 1800Ohm @ 5V |
| vgs(th) (最大值) @ id: | 1V @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 3pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
FDB12N50FTMRochester Electronics |
MOSFET N-CH 500V 11.5A D2PAK |
|
QS6J11TRROHM Semiconductor |
MOSFET 2P-CH 12V 2A TSMT6 |
|
NP32N055HLE-AZRochester Electronics |
32A, 55V, 0.033OHM, N-CHANNEL , |
|
MTMC8E2A0LBFPanasonic |
MOSFET 2N-CH 20V 7A WMINI8 |
|
VT6J1T2CRROHM Semiconductor |
MOSFET 2P-CH 20V 0.1A VMT6 |
|
SLA5086Sanken Electric Co., Ltd. |
MOSFET 5P-CH 60V 5A 12-SIP |
|
QH8JB5TCRROHM Semiconductor |
-40V DUAL PCH+PCH SMALL SIGNAL M |
|
MCH6664-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 30V 1.5A SOT363 |
