English
简体中文
PLC TRANSFORMER EE13 THT TI
HEXFET POWER MOSFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 55V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.7A |
| rds on (max) @ id, vgs: | 50mOhm @ 4.7A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 36nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 740pF @ 25V |
| 功率 - 最大值: | 2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ECH8653-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDMS3660ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/30A 8QFN |
|
ALD110808APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
NTMD3P03R2Rochester Electronics |
P-CHANNEL MOSFET |
|
APTM100H45STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP4 |
|
CMLDM8005 TR PBFREECentral Semiconductor |
MOSFET 2P-CH 20V 0.65A SOT563 |
|
ECH8693R-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 14A SOT28 |
|
FDZ2553NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AONX38168Alpha and Omega Semiconductor, Inc. |
25V DUAL ASYMMETRIC N-CHANNEL XS |
|
AON6812Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 27A 8-DFN |
|
SI4922BDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
ZXMD63N03XTAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 2.3A 8-MSOP |
|
DMP2240UDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 2A SOT-26 |