







MOSFET DUAL N-CHAN 30V
IC OSC CLOCK QD FREQ 10CLCC
IC RTC CLK/CALENDAR I2C 14-TSSOP
QN908X: ULTRA-LOW-POWER BLUETOOT
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual), Schottky |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) |
| rds on (max) @ id, vgs: | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 49nC @ 10V, 200nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2000pF @ 15V, 8200pF @ 15V |
| 功率 - 最大值: | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRL6372TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 8.1A 8SOIC |
|
|
SI7923DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.3A 1212-8 |
|
|
FDMS9600SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A POWER56 |
|
|
NVMFD5C470NT1GSanyo Semiconductor/ON Semiconductor |
40V 11.7 MOHM T8 S08FL DU |
|
|
DMN2004DWKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 20V 540MA SOT363 |
|
|
SSM6N36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
|
|
SQJ260EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
|
SLA5065 LF830Sanken Electric Co., Ltd. |
MOSFET 4N-CH 60V 7A 15-SIP |
|
|
MMDF2P02ER2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
|
FDM3300NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
AON2812Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 4.5A |
|
|
NTZD3155CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SOT-563 |
|
|
BB304CDW-TL-ERochester Electronics |
RF N |