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MOSFET 2N-CH 20V 630MA SOT363
MOSFET DUAL N-CHAN 30V
IC INST AMP 1 CIRCUIT 8MSOP
IC OPAMP DIFF 1 CIRCUIT 12DFN
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual), Schottky |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) |
| rds on (max) @ id, vgs: | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 49nC @ 10V, 200nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2000pF @ 15V, 8200pF @ 15V |
| 功率 - 最大值: | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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