English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A |
| rds on (max) @ id, vgs: | 100mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 660pF @ 10V |
| 功率 - 最大值: | 4.8W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 15-SIP |
| 供应商设备包: | 15-SIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMDF2P02ER2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDM3300NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AON2812Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 4.5A |
|
NTZD3155CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SOT-563 |
|
BB304CDW-TL-ERochester Electronics |
RF N |
|
SI4925BDY-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 5.3A 8-SOIC |
|
ALD1101BPALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
DMN65D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.18A SOT363 |
|
SI1926DL-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 0.37A SOT363 |
|
UM6K1NTNROHM Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363 |
|
DMP2160UFDBQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 3.8A 6UDFN |
|
DMN53D0LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.36A SOT363 |
|
DMN2008LFU-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CHA 20V 14.5A DFN2030 |
