类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 2A |
rds on (max) @ id, vgs: | 80mOhm @ 2A, 10V |
vgs(th) (最大值) @ id: | 1V @ 11µA |
栅极电荷 (qg) (max) @ vgs: | 5nC @ 10V |
输入电容 (ciss) (max) @ vds: | 500pF @ 15V |
功率 - 最大值: | 500mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
供应商设备包: | PG-TSOP-6-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM6N43FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.5A US6 |
|
DMN1033UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 12V U-WLB1818-4 |
|
FDMD86100Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SIZ200DT-T1-GE3Vishay / Siliconix |
MOSFET N-CH DUAL 30V |
|
DMC3071LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
AOSD21307Alpha and Omega Semiconductor, Inc. |
30V DUAL P-CHANNEL MOSFET |
|
ALD1102BPALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
DMN2022UNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 20V POWERDI3333-8 |
|
RM4953Rectron USA |
MOSFET 2 P-CHANNEL 30V 5.1A 8SOP |
|
BSO303SPHRochester Electronics |
7.2A, 30V, 0.021OHM, P-CHANNEL, |
|
QS8K13TCRROHM Semiconductor |
MOSFET 2N-CH 30V 6A TSMT8 |
|
FDS6984SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH6603-TL-HRochester Electronics |
SMALL SIGNAL FET |