English
简体中文
MOSFET 2P-CH 10.6V 8DIP
SWITCH SNAP ACTION SPDT 10A 125V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 270Ohm @ 5V |
| vgs(th) (最大值) @ id: | 1.2V @ 10µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 10pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN2022UNS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 20V POWERDI3333-8 |
|
RM4953Rectron USA |
MOSFET 2 P-CHANNEL 30V 5.1A 8SOP |
|
BSO303SPHRochester Electronics |
7.2A, 30V, 0.021OHM, P-CHANNEL, |
|
QS8K13TCRROHM Semiconductor |
MOSFET 2N-CH 30V 6A TSMT8 |
|
FDS6984SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH6603-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
MAX8555ETB+TRochester Electronics |
LOW-COST, HIGH-RELIABILITY, 0.5V |
|
NTJD1155LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 8V 1.3A SOT363 |
|
SQJ910AEP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
ALD114835PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
IPA50R350CPRochester Electronics |
10A, 500V, 0.35OHM, N-CHANNEL, |
|
SIA519EDJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 4.5A SC70-6 |
|
SIS903DN-T1-GE3Vishay / Siliconix |
MOSFET DUAL P-CHAN POWERPAK 1212 |