English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTJD1155LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 8V 1.3A SOT363 |
|
SQJ910AEP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
ALD114835PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
IPA50R350CPRochester Electronics |
10A, 500V, 0.35OHM, N-CHANNEL, |
|
SIA519EDJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 4.5A SC70-6 |
|
SIS903DN-T1-GE3Vishay / Siliconix |
MOSFET DUAL P-CHAN POWERPAK 1212 |
|
UP0487C00LPanasonic |
MOSFET 2N-CH 20V 0.1A SSMINI-6 |
|
NDF04N60ZG-001Rochester Electronics |
3A, 600V, 2OHM, N CHANNEL , TO 2 |
|
SSM6P69NU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CHX2 VDSS- |
|
FQS4901TFSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 400V 450MA 8SOIC |
|
DMN3055LFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 5A UDFN2020-6 |
|
IPG20N04S409ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL_30/40V |
|
FDMC6890NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 4A POWER33 |
