类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 350mA, 200mA |
rds on (max) @ id, vgs: | 3.7Ohm @ 80mA, 4V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | 1.58nC @ 10V |
输入电容 (ciss) (max) @ vds: | 7pF @ 10V |
功率 - 最大值: | 800mW |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-SMD, Flat Leads |
供应商设备包: | 6-MCPH |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS4559Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 60V 4.5/3.5A 8SOIC |
|
FCB20N60FRochester Electronics |
MOSFET N-CH 600V 20A D2PAK |
|
FDME1034CZTSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6-MICROFET |
|
AO4813Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 30V 7.1A 8SOIC |
|
ZXMC3A16DN8TCZetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V 8SOIC |
|
IRF7104TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.3A 8-SOIC |
|
FDMS3606SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/27A POWER56 |
|
SQ4917EY-T1_BE3Vishay / Siliconix |
MOSFET 2 P-CHANNEL 60V 8A 8SO |
|
VMM300-03FWickmann / Littelfuse |
MOSFET 2N-CH 300V 290A Y3-DCB |
|
ALD110800APCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
BSD235CH6327XTSA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V SOT363 |
|
NTMFD4C87NT1GRochester Electronics |
POWER, N-CHANNEL, MOSFET |
|
SM6K2T110ROHM Semiconductor |
MOSFET 2N-CH 60V 0.2A SOT-457 |