类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate, 1.5V Drive |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 2.5A |
rds on (max) @ id, vgs: | 72mOhm @ 2.5A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 3.6nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 260pF @ 10V |
功率 - 最大值: | 1W |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SMD, Flat Lead |
供应商设备包: | 8-TSST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UT6MA3TCRROHM Semiconductor |
20V NCH+PCH MIDDLE POWER MOSFET |
|
SSM6N39TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2 N-CHANNEL 20V 1.6A UF6 |
|
SI7938DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 60A PPAK SO-8 |
|
NTLJD3183CZTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDMD8630Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 38A POWER5X6 |
|
NTGD4161PT1GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSO207PHXUMA1Rochester Electronics |
PFET, 5A I(D), 20V, 0.045OHM, 2- |
|
DMHC6070LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CHA 60V 3.1A 8SO |
|
RF1S50N06Rochester Electronics |
50A, 60V, 0.022 OHM, N-CHANNEL |
|
STS4DNF60LSTMicroelectronics |
MOSFET 2N-CH 60V 4A 8-SOIC |
|
APTM100A13SCGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 65A SP6 |
|
2N7002VAC-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.28A SOT-563 |
|
ALD114804SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |