类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A, 2.3A |
rds on (max) @ id, vgs: | 100mOhm @ 2.2A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 30nC @ 10V |
输入电容 (ciss) (max) @ vds: | 250pF @ 20V |
功率 - 最大值: | 2W |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIZ342ADT-T1-GE3Vishay / Siliconix |
MOSFET DL N-CH 30V PPAIR 3 X 3 |
|
FDWS9420-F085Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
QS8J2TRROHM Semiconductor |
MOSFET 2P-CH 12V 4A TSMT8 |
|
DMHC3025LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CH 30V 8SO |
|
CAB450M12XM3Wolfspeed - a Cree company |
1.2KV 450A SIC HALF BRIDGE MOD |
|
EFC6612R-A-TFRochester Electronics |
MOSFET 2N-CH 20V 23A EFCP |
|
SSD2007ATFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD2105LTBGRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI4936CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.8A 8-SOIC |
|
SQJB60EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
QH8JC5TCRROHM Semiconductor |
-60V DUAL PCH+PCH SMALL SIGNAL M |
|
FX20KMJ-3#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
NVMFD5C650NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |