English
简体中文
TVS DIODE 9V 15.4V P600
MOSFET 2N-CH 6MLP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 28nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 800mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-WDFN Exposed Pad |
| 供应商设备包: | 6-MLP (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |
|
SH8J31GZETBROHM Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET |
|
ALD212914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
NTMFD5C470NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
CMLDM7484 TR PBFREECentral Semiconductor |
MOSFET N/P-CH 30V 0.45A SOT-563 |
|
IPA60R190E6Rochester Electronics |
600V 0.19OHM N-CHANNEL MOSFET |
|
FDR8308PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BSZ15DC02KDHXTMA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V 5.1/3.2A TDSON |
|
FDC6333CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 2.5A/2A SSOT6 |
|
NTJD4152PT2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 0.88A SC88-6 |
|
ALD212914PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
|
FDS8958BSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 6.4/4.5A 8SOIC |
|
FW276-TL-2HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |