CRYSTAL 24.0000MHZ 18PF SMD
POWER FIELD-EFFECT TRANSISTOR, 1
NETWORKING USB CABLE A - B
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSD235NH6327XTSA1IR (Infineon Technologies) |
MOSFET 2N-CH 20V 0.95A SOT363 |
|
PMCPB5530X,115Nexperia |
MOSFET N/P-CH 20V 6HUSON |
|
BSO303PHXUMA1Rochester Electronics |
7A, 30V, 0.021OHM, 2-ELEMENT, P |
|
IRF7328PBFRochester Electronics |
IRF7328 - 20V-250V P-CHANNEL POW |
|
DMC3730UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
ALD111933PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
ALD210814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
EFC6602R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
HUFA76407DK8TRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIA527DJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 12V 4.5A SC-70-6 |
|
FDS8858CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC |
|
SSM6P36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
SLA5068 LF853Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 7A 15-SIP |