English
简体中文
2.5V DRIVE NCH+NCH MOSFET
MOSFET N/P-CH 60V/50V SOT666
IC RTC CLK/CALENDAR PAR 34-PCM
IC REG CTRLR BOOST/FLYBK 14SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 250mA (Ta) |
| rds on (max) @ id, vgs: | 2.4Ohm @ 250mA, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 15pF @ 25V |
| 功率 - 最大值: | 150mW |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | UMT6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FPF1C2P5BF07ARochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
SIS932EDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH DL 30V PWRPAK 1212-8 |
|
FDG6301N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SC70-6 |
|
NVMFS5832NLT1GRochester Electronics |
40V, 0.0072OHM, N-CHANNEL, MOSF |
|
|
NX1029X,115Nexperia |
MOSFET N/P-CH 60V/50V SOT666 |
|
MCH6663-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 1.8/1.5A MCPH6 |
|
VT6M1T2CRROHM Semiconductor |
MOSFET N/P-CH 20V 0.1A VMT6 |
|
UPA573T-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDS6911Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC |
|
2N7002DWQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.23A SOT363 |
|
SI4210DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
|
IRFF9211Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
PMDT670UPE,115Nexperia |
MOSFET 2P-CH 20V 0.55A SOT666 |