类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 7.5A |
rds on (max) @ id, vgs: | 13mOhm @ 7.5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1130pF @ 15V |
功率 - 最大值: | 900mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2N7002DWQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.23A SOT363 |
|
SI4210DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
|
IRFF9211Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
PMDT670UPE,115Nexperia |
MOSFET 2P-CH 20V 0.55A SOT666 |
|
PSMN4R8-100BSE,118Rochester Electronics |
N CHANNEL 100V 4.8 MOHM STANDAR |
|
SH8K37GZETBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET. SH8K37G |
|
TPC8408,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 40V 6.1A/5.3A 8SOP |
|
NTJD4158CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V SOT363 |
|
PSMN035-150BRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
SI7998DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 25A PPAK SO-8 |
|
SIZF916DT-T1-GE3Vishay / Siliconix |
MOSFET N-CH DUAL 30V |
|
SQJ946EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
RM9926Rectron USA |
MOSFET 2 N-CHANNEL 20V 6A 8SOP |