MOSFET 2N-CH 30V 25A PPAK SO-8
PG 21 8X5MM U 20.2
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 25A, 30A |
rds on (max) @ id, vgs: | 9.3mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 26nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1100pF @ 15V |
功率 - 最大值: | 22W, 40W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | PowerPAK® SO-8 Dual |
供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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